| Abstract | 第3-5页 |
| Chapter 1 Introduction | 第8-22页 |
| 1.1 Semiconductor as Radiation Detectors | 第8-10页 |
| 1.2 Cadmium Zinc Telluride (Cd_(0.9)Zn_(0.1)Te) as Radiation Detector | 第10-13页 |
| 1.3 Interaction of Radiations with Semiconductors | 第13-19页 |
| 1.4 Application of Cd_(1-x)Zn_xTe | 第19-20页 |
| 1.5 Thesis Overview | 第20-22页 |
| Chapter 2 Experimental Methods and Equipments | 第22-44页 |
| 2.1 Crystal Growth Method | 第22页 |
| 2.2 Wafer's Surface Preparation | 第22页 |
| 2.3 Current-Voltage Measurement | 第22-23页 |
| 2.4 Electrical Properties | 第23-30页 |
| 2.4.1 Thermally Stimulated Current (TSC) | 第23-27页 |
| 2.4.2 Hall Measurement | 第27-30页 |
| 2.5 Optical Properties | 第30-42页 |
| 2.5.1 Photoluminescence (PL) Spectroscopy | 第30-36页 |
| 2.5.2 Infrared (IR) Transmittance | 第36-38页 |
| 2.5.3 Time of Flight (TOF) and Transient Charge Current (TCT) | 第38-41页 |
| 2.5.4 Detector Performance Measurement Equipment | 第41-42页 |
| 2.6 Annealing Treatment | 第42-44页 |
| Chapter 3 Electrical and optical properties of co-doped CdZnTe:(In,Pb) | 第44-58页 |
| 3.1 Infrared (IR) Microscopy | 第44页 |
| 3.2 Current-Voltage (I-V) Measurement | 第44-45页 |
| 3.3 Hall Measurement | 第45-46页 |
| 3.4 Infrared (IR) Transmittance | 第46-47页 |
| 3.5 Photoluminescence (PL) Measurement | 第47-49页 |
| 3.6 Thermally Stimulated Current (TSC) for co-doped CZT:(In,Pb) Crystal | 第49-52页 |
| 3.7 Time of Flight (TOF) for co-doped CdZnTe:(In,Pb) | 第52-56页 |
| 3.8 Summary of the Chapter | 第56-58页 |
| Chapter 4 Comparison of In doped and In, Pb co-doped Cd_(0.9)Zn_(0.1)Te | 第58-68页 |
| 4.1 Thermally Stimulated Current (TSC) for In and In,Pb co-doped Cd_(0.9)Zn_(0.1)Te | 第58-62页 |
| 4.2 Photoluminescence (PL) Spectroscopy for In and In, Pb co-doped Cd_(0.9)Zn_(0.1)Te | 第62-64页 |
| 4.3 Detector Performance Comparison | 第64-67页 |
| 4.4 Summary of the Chapter | 第67-68页 |
| Chapter 5 Annealing treatment of In and In,Pb co-doped Cd_(0.9)Zn_(0.1)Te under Te-rich condition | 第68-80页 |
| 5.1 Thermally Stimulated Current Before and After Annealing | 第68-73页 |
| 5.2 Photoluminescence (PL) Before and After Annealing | 第73-74页 |
| 5.3 Detector Performance Before and After Annealing | 第74页 |
| 5.4 Comparison with other Reference on Energy Spectrum | 第74-77页 |
| 5.5 Summary of the Chapter | 第77-80页 |
| Chapter 6 Conclusions | 第80-82页 |
| References | 第82-92页 |
| List of Publications | 第92-94页 |
| Acknowledgements | 第94-95页 |
