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石墨烯掺杂设计与本征性质调控的第一性原理研究

摘要第4-7页
Abstract第7-9页
Nomenclature第14-16页
Chapter 1 Introduction第16-35页
    1.1 Background第16-19页
    1.2 Introduction to graphene第19-28页
        1.2.1 Structure and electronic properties of graphene第20-23页
        1.2.2 Density of states第23-24页
        1.2.3 Optical properties第24-26页
        1.2.4 Magnetic properties第26-28页
    1.3 Impurity doping in graphene lattice第28-29页
    1.4 Theoretical techniques第29-30页
    1.5 Thesis scope第30-33页
    1.6 Methodology第33页
    1.7 Thesis organization第33-35页
Chapter 2 Computational Modeling and Methods第35-70页
    2.1 Introduction第35页
    2.2 Many-electron theory第35-45页
        2.2.1 Born-Oppenheimer approximation第35-36页
        2.2.2 Wave-function approaches第36-38页
        2.2.3 Density functional approach第38-42页
        2.2.4 Exchange-correlation functional第42-45页
    2.3 Electron-Ion interaction第45-52页
        2.3.1 All electron techniques第46页
        2.3.2 Pseudopotential technique第46-52页
    2.4 Momentum space formalism of KS equation第52-56页
        2.4.1 Energy cut-off第53页
        2.4.2 K-point sampling for the Brillouin zone第53-54页
        2.4.3 Self-consistent calculations第54-55页
        2.4.4 Total energy and Hellmann-Feynman Forces第55-56页
    2.5 Geometry optimization method第56-59页
    2.6 Computational code第59-62页
        2.6.1 Random phase approximation (RPA)第60-62页
        2.6.2 Visualization of electronic and structural analysis (VESTA) package第62页
    2.7 First-principles study on pure, boron and nitrogen co-doped graphene第62-69页
        2.7.1 Computational details第63-64页
        2.7.2 Results and discussions第64-69页
    2.8 Summary第69-70页
Chapter 3 Tailoring intrinsic properties of graphene by foreign-atomsubstitution第70-99页
    3.1 Introduction第70-71页
    3.2 Details of computation第71-72页
    3.3 Results and discussion第72-96页
        3.3.1 Structural and magnetic properties of AEM atom doped graphene第72-77页
        3.3.2 Structural and magnetic properties of 5d TM atom doped graphene第77-84页
        3.3.3 Electronic properties of AEM atom doped graphene第84-88页
        3.3.4 Electronic properties of 5d TM atom doped graphene第88-92页
        3.3.5 Optical properties of AEM atom doped graphene第92-96页
    3.4 Summary and conclusions第96-99页
Chapter 4 Manipulating intrinsic properties of graphene by 3d transition metaltrioxide (TMO_3) cluster substitution第99-121页
    4.1 Introduction第99-100页
    4.2 Computational method第100页
    4.3 Results and discussions第100-119页
        4.3.1 Structural and magnetic properties of TMO_3 cluster-doped graphene第100-105页
        4.3.2 Structural and magnetic properties of TM atom adsorbed at hollow site ofgraphene ring bearing three O atoms第105-110页
        4.3.3 Formation and adsorption energies第110-111页
        4.3.4 Comparison between the magnetic properties of TMO_3 cluster dopedgraphene and TM atom adsorbed O_3 doped graphene structures第111-112页
        4.3.5 Electronic properties第112-119页
    4.4 Brief summary第119-121页
Chapter 5 Transition metal tetraoxide (TMO_4) cluster substitution in defectivegraphene第121-144页
    5.1 Introduction第121-122页
    5.2 Computational methods第122页
    5.3 Results and discussions第122-142页
        5.3.1 Structural and magnetic properties of TMO_4 doped SV graphene第122-127页
        5.3.2 Structural and magnetic properties of TMO_4 doped DV graphene第127-133页
        5.3.3 Formation energies第133-134页
        5.3.4 Comparison between the magnetic properties of TMO_4 cluster-doped SVand DV graphene structures第134-136页
        5.3.5 Electronic properties第136-142页
    5.4 Brief summary第142-144页
Chapter 6 Concluding Remarks第144-152页
    6.1 Summary of the results第144-149页
    6.2 Major insights of the present study第149页
    6.3 Future recommendations第149-152页
References第152-171页
Appendix A第171-172页
    A.1 Supercell structure, spin density and charge density diagram for monolayergraphene第171-172页
List of Publications第172-175页
Acknowledgements第175-176页
Resume第176页

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