| 摘要 | 第4-5页 |
| Abstract | 第5页 |
| Chapter 1 Introduction | 第10-19页 |
| 1.1 Research background and significance | 第10-11页 |
| 1.2 The methods for characterization of semiconductor | 第11-15页 |
| 1.3 Research inside and outside of country and analysis | 第15-17页 |
| 1.3.1 Research abroad | 第15-16页 |
| 1.3.2 Research at home | 第16-17页 |
| 1.4 Main Content of Research | 第17-19页 |
| Chapter 2 Establishment and simulation of minority carrier density wave models | 第19-42页 |
| 2.1 Introduction | 第19页 |
| 2.2 Monte Carlo simulation | 第19-22页 |
| 2.2.1 Defect distribution using Monte Carlo simulation | 第19-20页 |
| 2.2.2 Proton trajectory and energy distribution | 第20-22页 |
| 2.3 Solar cell transport parameters | 第22-24页 |
| 2.4 Carrier density wave models for irradiated wafer and solar cell | 第24-30页 |
| 2.4.1 Minority carrier transport equation | 第24-26页 |
| 2.4.2 Establishment of carrier density wave model for proton irradiated wafer | 第26-28页 |
| 2.4.3 Establishment of carrier density wave models for proton irradiated solar cell | 第28-30页 |
| 2.5 Numerical simulation analysis | 第30-41页 |
| 2.5.1 Wafer Transport Parameters Simulation Analysis | 第30-35页 |
| 2.5.2 Solar Cell Transport Parameters Simulation Analysis | 第35-41页 |
| 2.6 Summary of this Chapter | 第41-42页 |
| Chapter 3 Study on the effects of irradiation parameters on of solar cell | 第42-60页 |
| 3.1 Introduction | 第42页 |
| 3.2 Introduction of Synopsys sentaurus TCAD | 第42-46页 |
| 3.2.1 Simulation workflow | 第43-46页 |
| 3.3 Modeling of silicon solar cell and simulation of dark and light I-V curve | 第46-54页 |
| 3.3.1 Solar cell basic parameter | 第46-47页 |
| 3.3.2 Structure generation and meshing | 第47-48页 |
| 3.3.3 Simulation of solar cell parameters and dark I-V curve | 第48-51页 |
| 3.3.4 Simulation of light I-V curve | 第51-54页 |
| 3.4 Simulation of radiation damage and simulation of dark and light I-V curve | 第54-58页 |
| 3.4.1 Semiconductor equations in the presence of trap | 第54-55页 |
| 3.4.2 Trap model | 第55页 |
| 3.4.3 Inserting trap model into sentaurus device | 第55-56页 |
| 3.4.4 Simulation result of proton irradiated solar cell | 第56-58页 |
| 3.5 Summary of this chapter | 第58-60页 |
| Chapter 4 Experimental study on PCR frequency domain response of silicon wafer andsolar cell | 第60-73页 |
| 4.1 Introduction | 第60页 |
| 4.2 Test material and experiment system | 第60-64页 |
| 4.2.1 Experiment samples | 第60-61页 |
| 4.2.2 Quasi-steady-state photoconductance (QSSPC) experiment of the sample | 第61-62页 |
| 4.2.3 Photocarrier radiometry (PCR) experiment system | 第62-64页 |
| 4.3 PCR frequency response experimental study | 第64-67页 |
| 4.3.3 PCR frequency scan experiment on wafer | 第64-65页 |
| 4.3.4 PCR frequency scan experiment on proton irradiated solar cell | 第65-67页 |
| 4.4 The obtainment of transport parameters of wafer and irradiated solar cell | 第67-72页 |
| 4.4.1 Multi parameter fitting | 第67-68页 |
| 4.4.2 The obtainment of transport parameters of wafer | 第68-69页 |
| 4.4.3 The obtainment of transport parameters of irradiated solar cell | 第69-72页 |
| 4.5 Summary of this Chapter | 第72-73页 |
| Chapter 5 LIC experimental study on c-Si solar cell | 第73-78页 |
| 5.1 Introduction | 第73页 |
| 5.2 The relationship between LIC signal and electrical parameters of solar cell | 第73-74页 |
| 5.3 LIC experiment of c-Si solar cell | 第74-77页 |
| 5.3.1 LIC experimental setup | 第74-75页 |
| 5.3.2 LIC experiment of solar cell | 第75-77页 |
| 5.4 Summary of this chapter | 第77-78页 |
| Conclusion | 第78-79页 |
| 结论 | 第79-80页 |
| 参考文献 | 第80-85页 |
| Appendix A carrier density wave model coefficient | 第85-87页 |
| 攻读硕士学位期间发表的论文 | 第87-89页 |
| Acknowledgement | 第89-90页 |
| Resume | 第90页 |
