| Abstract | 第1-8页 |
| 摘要 | 第8-22页 |
| Chapter 1 | 第22-31页 |
| 1. Introduction | 第22-31页 |
| ·Motivation | 第25-27页 |
| ·Summary of Contributions | 第27-29页 |
| ·Organization of the Dissertation | 第29-31页 |
| Chapter 2 Literature review | 第31-62页 |
| 2. Materials and properties | 第31-62页 |
| ·Zinc Oxide | 第31-33页 |
| ·Copper Oxide | 第33-35页 |
| ·SnO_2 | 第35-37页 |
| ·Graphene Oxide | 第37-40页 |
| ·The Formation of the Nanostructures | 第40-41页 |
| ·Fabrication Method of the Nanostructures Materials | 第41-46页 |
| ·Chemical Vapor Deposition (CVD) | 第42-44页 |
| ·Thermal Oxidation | 第44-45页 |
| ·Improved Hummer's method | 第45-46页 |
| ·The investigations methods of nanomaterials characteristics | 第46-49页 |
| ·The optical microscope invisible light | 第46页 |
| ·The transmission electron microscope (TEM) | 第46-47页 |
| ·The scanning electron microscope (SEM) | 第47页 |
| ·Atomic force microscope (AFM) | 第47-48页 |
| ·X-ray diffraction (XRD) | 第48-49页 |
| ·Photoluminescence (PL)/electroluminescence (EL) | 第49页 |
| ·Photoconductivity in metal oxide Nanostructures | 第49-50页 |
| ·Concepts in photoconductivity | 第50-54页 |
| ·Steady-state photoconductivity | 第52-54页 |
| ·Introduction of the Photodetector | 第54-55页 |
| ·Optical absorption of metal oxide semiconductor materials | 第54-55页 |
| ·The metal oxide photoconductor | 第55-56页 |
| ·The main effective performance parameters in the photodetector | 第56-58页 |
| ·Spectral Response | 第56页 |
| ·External Quantum Efficiency (EQE) | 第56页 |
| ·Responsivity(R) | 第56页 |
| ·Noise Equivalent Power (NEP) | 第56页 |
| ·Detectivity | 第56页 |
| ·Linearity and Dynamic Range (LDR) | 第56页 |
| ·Response Speed | 第56-57页 |
| ·Response time/Recovery time | 第57-58页 |
| ·The main effective Factors to photoresponsivity in metal-oxide nano structures | 第58-61页 |
| ·Surface effects | 第58-59页 |
| ·Metal oxide nano structures photoresponsivity in the dry air and in the humidity | 第59-60页 |
| ·Electrical contacts | 第60-61页 |
| ·Summary | 第61-62页 |
| Chapter 3 | 第62-88页 |
| 3. Synthesis and characterization of nano materials | 第62-88页 |
| ·Introduction | 第62-63页 |
| ·Growth Mechanisms and Growth Kinetics of Semiconductor Nano structures | 第63页 |
| ·Metal Oxide nanostructures synthesis techniques | 第63-64页 |
| ·Nanowire growth mechanisms | 第64-65页 |
| ·General Characteristics of Metal Oxide Nanostructures | 第65-66页 |
| ·Applications of the Nanostructures | 第66-71页 |
| ·Applications of ZnO Nano wires | 第66-69页 |
| ·Applications of CuO Nanowires | 第69页 |
| ·Applications of SnO_2 Nanowires | 第69-70页 |
| ·Applications of GO nanosheets | 第70-71页 |
| ·The growth procedure of metal oxide nanomaterials | 第71-87页 |
| ·The substrate preparation | 第71-72页 |
| ·Substrate cleaning methods | 第72页 |
| ·Synthesis of ZnO | 第72-77页 |
| ·Chemical vapor deposition growth of ZnO nanowires | 第72-74页 |
| ·Characterization of ZnO nanowires | 第74-77页 |
| ·Synthesis of CuO | 第77-82页 |
| ·Thermal Oxidation growth of CuO nanowires | 第78页 |
| ·Characterization of CuO nanowires | 第78-82页 |
| ·Synthesis of SnO_2 | 第82-84页 |
| ·Chemical Vapor deposition growth of SnO_2 nanowires | 第82-83页 |
| ·Characterization of SnO_2 nanowires | 第83-84页 |
| ·Synthesis of GO nanosheets | 第84-87页 |
| ·Improved Hummers growth method of GO nanosheets | 第84-85页 |
| ·Characterization of GO nanosheets | 第85-87页 |
| ·Summary | 第87-88页 |
| Chapter 4 | 第88-134页 |
| 4. Photodetectors fabrication and characterization of devices | 第88-134页 |
| ·Photodetectors fabrication | 第88页 |
| ·Metal Oxide Nanostructures Devices | 第88-89页 |
| ·Deposition methods of SiO_2 on Si substrate | 第89-93页 |
| ·Thermal Oxidation | 第90页 |
| ·Dry oxidation method | 第90-91页 |
| ·Wet oxide method | 第91-93页 |
| ·Lithography and device fabrication | 第93-94页 |
| ·Photolithography | 第93页 |
| ·Lithography processes for nanowires photodetector fabrication | 第93-94页 |
| ·Fabrication method of inter digitated electrodes | 第94-97页 |
| ·Nano structures Device Structures | 第97-98页 |
| ·The photodetection mechanism in the metal oxide photodetectors | 第98-99页 |
| ·The photodetector characterization system | 第99-100页 |
| ·Individual ZnO nanowire photodetector fabrication and electricalcharacterization | 第100-102页 |
| ·Optical properties and photoresponse of individual Photoresponse ofindividual ZnO nano wires | 第102-106页 |
| ·Photo luminescence spectroscopy study of individual ZnO nanowire semiconductor | 第103-106页 |
| ·Ultrahigh responsivity UV/IR photodetectors based on pure CuO nanowiresfabrication and electrical characterization | 第106-108页 |
| ·Optical properties and photoresponse of ultrahigh responsivity UV/IRphotodetectors based on pure CuO nanowires | 第108-113页 |
| ·Ultrafast and high sensitive UV/IR photodetector based on a single SnO_2nanowire fabrication and electrical characterization | 第113-115页 |
| ·Optical properties and photoresponse of ultrafast and high sensitive UV/IRphotodetector based on a single SnO_2 nanowire | 第115-119页 |
| ·UV photodetector based on Graphene oxide nanosheets fabrication andelectrical characterization | 第119-121页 |
| ·The UV photodetection of the graphene oxide nanosheets | 第121-122页 |
| ·Biasing voltage and conductivity depletion layer thickness dependence ofphotodetectors response | 第122-130页 |
| ·Case of ZnO Photodetector | 第123-124页 |
| ·Case of CuO Photodetector | 第124-127页 |
| ·Case of SnO_2 Photodetector | 第127-129页 |
| ·Case of GO Photodetector | 第129-130页 |
| ·Comparison of the photodetectors results with related literature | 第130-133页 |
| ·Summary | 第133-134页 |
| Chapter 5 | 第134-141页 |
| 5. Conclusion and future research | 第134-141页 |
| ·Conclusion | 第134-137页 |
| ·Future Research | 第137-141页 |
| Abstract of Innovation Points | 第141-142页 |
| References | 第142-154页 |
| Published Academic Theses during PhD Period | 第154-155页 |
| Acknowledgement | 第155-156页 |
| About the Author | 第156-157页 |
