| ACKNOWLEDGEMENTS | 第5-6页 |
| 摘要 | 第6-7页 |
| ABSTRACT | 第7页 |
| List of Abbreviations | 第13-14页 |
| CHAPTER 1 INTRODUCTION | 第14-20页 |
| 1.1 Background and significant | 第14-17页 |
| 1.2 New Wide band gap power Electronic Devices | 第17页 |
| 1.3 Proposed DC-DC Converter Goal,Objective and Scope | 第17-20页 |
| CHAPTER 2 Thermal analysis of SiC & GaN MOSFET with their Efficiency andPerformance | 第20-32页 |
| 2.1 Temperature Dependent Characteristic and Simulation | 第20-26页 |
| 2.1.1 Energy Band-Gap | 第20-21页 |
| 2.1.2 Carrier Mobility | 第21-23页 |
| 2.1.3 Saturation Velocity | 第23-24页 |
| 2.1.4 Thermal Conductivity | 第24-26页 |
| 2.2 SiC & GaN Transistor Characteristic at Elevated Temperature | 第26-29页 |
| 2.2.1 MOSFET Modeling and Characteristic Curves Analysis | 第26-29页 |
| 2.3 Comparison of Heat Flux | 第29-30页 |
| 2.4 Discussion and Results | 第30-32页 |
| CHAPTER 3 PROPOSED MVDC DC-DC Converter | 第32-56页 |
| 3.1 Modeling and control of MVDC Three-level DC-DC Converter | 第34页 |
| 3.2 Topology and system Description on HV side | 第34-37页 |
| 3.2.1 Three level Diode Clamped inverter Topology | 第34-37页 |
| 3.3 Topology and Mathematical model of SVPWM on LV side DCConverter | 第37-39页 |
| 3.4 Voltage control Design Principal on LV side | 第39-47页 |
| 3.4.1 Proposed Control Strategy during Voltage Dip | 第41-42页 |
| 3.4.2 Proposed Outer side (VCL) Voltage Control loop | 第42-43页 |
| 3.4.3 Proposed Inner Current Loop control Design | 第43-47页 |
| 3.5 Simulation results and Discussion | 第47-56页 |
| CHAPTER 4 DC-DC Converter Comparison Analysis | 第56-66页 |
| 4.1 Converter Performance at Variable Switching frequency | 第58-60页 |
| 4.2 Simulation and Analysis | 第60-64页 |
| 4.3 Results and Discussion | 第64-66页 |
| CHAPTER 5 Conclusion and Future Directions | 第66-68页 |
| Appendix | 第68-70页 |
| References | 第70-74页 |
| Publications | 第74页 |
