| CHAPTER 1 Introduction | 第1-11页 |
| ·General Description | 第7-9页 |
| ·Motivation and Structure of this Thesis | 第9-11页 |
| CHAPTER 2 Basic Concepts and Physical Principles | 第11-20页 |
| ·Binary Collision | 第11-12页 |
| ·Scattering Cross Section | 第12页 |
| ·Stepping | 第12-17页 |
| ·Stopping Power and Energy Loss | 第12-14页 |
| ·Stopping Cross Section | 第14-16页 |
| ·Multiple Scattering and Energy Straggling | 第16-17页 |
| ·Ion Implantation | 第17-20页 |
| ·Ion Range and Distributions | 第17-18页 |
| ·Radiation Damage | 第18页 |
| ·Sputtering by Particle Bombardment and Surface Roughness | 第18-19页 |
| ·Thermal Effects | 第19-20页 |
| CHAPTER 3 Experimental Techniques | 第20-34页 |
| ·Rutherford Backscattering Spectrometry (RBS) | 第20-23页 |
| ·Experimental Set-up | 第20-21页 |
| ·Energy Calibration | 第21页 |
| ·Depth Scale | 第21-22页 |
| ·Stoichiometric Calculation for a Compound Sample | 第22-23页 |
| ·An Overview of Elastic Recoil Detection (ERD) | 第23-24页 |
| ·ToF-E ERD | 第24-32页 |
| ·Introduction | 第24页 |
| ·Experimental Set-up | 第24-26页 |
| ·Data Evaluation | 第26-28页 |
| ·Depth Scale | 第28-29页 |
| ·Stoichiometric Calculations | 第29页 |
| ·Calculation of Element Contained in a Thin Surface Layer | 第29-32页 |
| ·Advantages and Limitations | 第32页 |
| ·Other Techniques | 第32-34页 |
| ·Scanning Electron Microscopy (SEM) | 第32-33页 |
| ·X-ray Diffraction (XRD) | 第33页 |
| ·Ellipsometry | 第33-34页 |
| CHAPTER 4 Detection Efficiency of ToF-E ERD Systems | 第34-53页 |
| ·Silicon Charged Particle Detectors | 第34-37页 |
| ·Silicon Charged Particle Detector Basics | 第34-36页 |
| ·Leakage Current | 第36-37页 |
| ·Carbon-foil Detector | 第37-38页 |
| ·Carbon-foil Time Detector | 第37-38页 |
| ·Counting Rate | 第38页 |
| ·Detection Efficiency of ToF-E ERD System | 第38-53页 |
| ·Introduction | 第38-40页 |
| ·Experimental | 第40-41页 |
| ·Results and Discussions | 第41-50页 |
| ·Analysis of Data | 第41-43页 |
| ·Factors Governing the Detection Efficiency of a Carbon-foil Time Detector | 第43-44页 |
| ·Correlation with the Stopping Power in Carbon Foils | 第44-48页 |
| ·Empirical Description of the Relative Detection Efficiency | 第48-50页 |
| ·Relation to the Overall Detection Efficiency | 第50页 |
| ·Conclusions | 第50-53页 |
| CHAPTER 5 Ion Beam Synthesis of Silicides in Silicon | 第53-65页 |
| ·Metallic Silicides | 第53-54页 |
| ·Ion Beam Synthesis (IBS) | 第54-56页 |
| ·Ion Beam Synthesis | 第54页 |
| ·MEVVA Ion Source and Implantation System | 第54-56页 |
| ·Formation of Thin Surface Films of Ni-, V- and Co-silicide by IBS | 第56-60页 |
| ·Introduction | 第56页 |
| ·Experimental | 第56-57页 |
| ·Experimental Results and Discussions | 第57-59页 |
| ·Conclusions | 第59-60页 |
| ·Foreign Atom Incorporation during Metal Silicide Formation by IBS | 第60-65页 |
| ·Introduction | 第60页 |
| ·Materials and Methods | 第60-61页 |
| ·Sample Preparation | 第60页 |
| ·ERD Measurements | 第60-61页 |
| ·Results and Discussions | 第61-63页 |
| ·Conclusions | 第63-65页 |
| CHAPTER 6 High Dose Co Implantation in Si,Oxide/Si and Nitride/Si | 第65-99页 |
| ·Formation of Thin Silicide Surface Films | 第65-76页 |
| ·Introduction | 第65-66页 |
| ·Experimental | 第66-67页 |
| ·Sample Preparation | 第66页 |
| ·Sample Implantation | 第66-67页 |
| ·ERDA Measurements | 第67页 |
| ·X-ray Diffraction Measurements | 第67页 |
| ·Results and Discussions | 第67-75页 |
| ·Co Implantation into Pure Si(100) and Si (111) Samples | 第67-70页 |
| ·Co Implantation into Nitride/Si(100) Samples | 第70-72页 |
| ·Co Implantation into Group 2 and 3 Samples | 第72-73页 |
| ·Study of C and O Contamination | 第73-74页 |
| ·Removal of the Surface Layer of SiO_2/Si and Si_3N_4/Si Samples | 第74-75页 |
| ·Conclusions | 第75-76页 |
| ·Sputtering Yield Transients | 第76-87页 |
| ·Introduction | 第76-77页 |
| ·Experimental | 第77页 |
| ·Results and Discussions: | 第77-86页 |
| ·Stoichiometry of the Samples before Co Bombardment | 第77-79页 |
| ·Partial Sputtering Yield of O and N | 第79-82页 |
| ·Partial Sputtering Yield of Si | 第82-83页 |
| ·Partial Sputtering Yield of Co | 第83-86页 |
| ·Conclusions | 第86-87页 |
| ·Heavy Dose Co Sputtering Induced Surface Topography Development | 第87-99页 |
| ·Introduction | 第87-88页 |
| ·Experimental | 第88页 |
| ·Sample Preparation and Co Bombardment | 第88页 |
| ·Sample Annealing | 第88页 |
| ·Scanning Election Microscopy Measurements | 第88页 |
| ·Results and Discussions | 第88-96页 |
| ·Morphology Pure Si(111) and Si(100) Samples | 第88-90页 |
| ·Morphology of 155 nm SiO_2/Si(111) and 144 nm SiO_2/Si(100) Samples | 第90-93页 |
| ·Morphology of Nitride/Si (100) Samples | 第93-96页 |
| ·Morphology of Annealed Si(111) Samples | 第96页 |
| ·Conclusions | 第96-99页 |
| CHAPTER 7 The Effect of Stoichiometric Disturbance on Activation of MeV Si Implantation in GaAs | 第99-107页 |
| ·GaAs and other Ⅲ-Ⅴ Semiconductors | 第99页 |
| ·The Effect of Stoichiometric Disturbance on Activation of MeV Si Implantation in GaAs | 第99-107页 |
| ·Introduction | 第99-100页 |
| ·Experimental Techniques | 第100页 |
| ·Stoichiometric Distributions in Si Implanted GaAs | 第100-102页 |
| ·Experimental Results and Transport Equation Calculation | 第102-105页 |
| ·Concluding Remarks | 第105-107页 |
| CHAPTER 8 Future Trends | 第107-109页 |
| ·ERD Techniques | 第107页 |
| ·ToF-E ERD | 第107页 |
| ·ΔE-E ERD | 第107页 |
| ·IBS-CoSi_2 | 第107-109页 |
| ·IBS Combined with Lithography Technique | 第107页 |
| ·Formation of Ohmic Contacts to Ⅲ-Ⅴ Heterostructures | 第107-108页 |
| ·IBS Combined with other IBS Structure | 第108-109页 |
| References | 第109-113页 |
| Appendix A: Publications and Author's Contribution | 第113-115页 |
| Appendix B: Boltzmann Transport Equations for Local Stoichiometric Imbalance in GaAs Implanted by Si | 第115-128页 |
| 离子束方法在纳米科学中的应用 | 第128-149页 |
| Applications of Ion Beam Methods in Nanometer Science | 第149-168页 |
