| 摘要 | 第3-4页 |
| Abstract | 第4-5页 |
| Chapter 1 Introduction | 第8-24页 |
| 1.1 Family of two-dimensional materials | 第8-14页 |
| 1.1.1 Graphene-like 2D sheets | 第8-9页 |
| 1.1.2 Transistion metal Dichalcogenides | 第9-12页 |
| 1.1.3 Toplogical insulator | 第12-14页 |
| 1.2 2D material heterostructures | 第14-24页 |
| 1.2.1 Moiré superlattice potential modulation | 第16-18页 |
| 1.2.2 Interlayer Electron-electron interaction | 第18-20页 |
| 1.2.3 Interlayer Electron-phonon interaction | 第20页 |
| 1.2.4 Proximity effect | 第20-24页 |
| Chapter 2 Experimental techniques | 第24-35页 |
| 2.1 Angle-resolved photoemission spectroscopy (ARPES) | 第24-35页 |
| 2.1.1 General description | 第24-28页 |
| 2.1.2 The three-step and one-step model | 第28-30页 |
| 2.1.3 Single particle spectral functions | 第30-32页 |
| 2.1.4 State-of-the-art photoemission | 第32-35页 |
| Chapter 3 Band engineering in van der Waals heterostructures Graphene/h-BN | 第35-57页 |
| 3.1 Introduction | 第35-36页 |
| 3.2 Epitaxial graphene/h-BN heterostructure with 0?stacking angle | 第36-47页 |
| 3.2.1 Second-generation Dirac cones in epitaxial graphene/h-BN | 第37-40页 |
| 3.2.2 Gap induced by inversion symmetry breaking in epitaxial graphene/h-BN | 第40-42页 |
| 3.2.3 Discussion | 第42-47页 |
| 3.3 Transferred graphene/h-BN heterostructure with non-zero stacking angles | 第47-57页 |
| 3.3.1 Experimental setup for Nanospot angle-resolved photoemission spectroscopy | 第49-51页 |
| 3.3.2 Band structure modulation in transferred graphene/h-BN | 第51-55页 |
| 3.3.3 Discussion | 第55-57页 |
| Chapter 4 Simpler van der Waals heterostructure-Twisted bilayer graphene | 第57-67页 |
| 4.1 Introduction | 第57-59页 |
| 4.2 Potential modulation in twisted bilayer graphene | 第59-63页 |
| 4.3 Second-generation Dirac point in twisted bilayer graphene | 第63-64页 |
| 4.4 Discussion | 第64-67页 |
| Chapter 5 Proximity effect between topological insulator and d-wave superconductors | 第67-79页 |
| 5.1 Introduction | 第67-68页 |
| 5.2 Proximity-induced gap on surface states of Bi-_2Se_3 | 第68-75页 |
| 5.3 Symmetry of the proximity-induced gap | 第75-76页 |
| 5.4 Discussion | 第76-79页 |
| Chapter 6 Effect of magnetic Cr deposition on Bi_2Se_3 surface | 第79-88页 |
| 6.1 Introduction | 第79页 |
| 6.2 Effect of Cr deposition on Bi_2Se_3 surface | 第79-83页 |
| 6.3 Discussion | 第83-88页 |
| Chapter 7 Conclusion | 第88-89页 |
| Bibliography | 第89-98页 |
| Acknowledgement | 第98-101页 |
| Curriculum Vitae | 第101-103页 |
